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PD - 93831A
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level IRHF57234SE 100K Rads (Si) RDS(on) 0.42
IRHF57234SE JANSR2N7499T2 250V, N-CHANNEL
REF: MIL-PRF-19500/706
5
TECHNOLOGY
ID QPL Part Number 5.2A JANSR2N7499T2
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-39
Features:
n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 5.2 3.3 20.8 25 0.2 20 142 5.2 2.5 6.8 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 ( 0.063 in./1.6mm from case for 10s) 0.98(Typical)
g
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1
06/16/04
IRHF57234SE, JANSR2N7499T2
Pre-Irradiation
Min
250 -- -- 2.5 4.0 -- -- -- -- -- -- -- -- -- -- -- --
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Typ Max Units
-- 0.31 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.42 4.5 -- 10 25 100 -100 28 7.4 12 25 100 35 40 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 3.3A A VDS = VGS, ID = 1.0mA VDS >= 15V, IDS = 3.3A A VDS= 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 5.2A VDS = 125V VDD = 125V, ID = 5.2A VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1007 155 8
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 5.2 20.8 1.5 287 2.3
Test Conditions
A
V ns C Tj = 25C, IS = 5.2A, VGS = 0V A Tj = 25C, IF = 5.2A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
-- -- -- 175 5.0 --
Units
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics
IRHF57234SE, JANSR2N7499T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-39) Diode Forward Voltage
Min
250 2.0 -- -- -- -- -- --
100K Rads (Si)
Max
-- 4.5 100 -100 10 0.402 0.42 1.5
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 200V, VGS=0V VGS = 12V, ID = 3.3A VGS = 12V, ID = 3.3A VGS = 0V, ID = 5.2A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 250 250 250 250 250 32.5 250 250 250 250 240 28.4 250 250 225 175 50
300 250 200 VDS 150 100 50 0 0 -5 -10 VGS -15 -20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF57234SE, JANSR2N7499T2
Pre-Irradiation
100
Drain-to-Source Current (A) I D , I Drain-to-Source Current (A) D'
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1
1
5.0V
0.1
5.0V
0.01 0.01
0.1
0.001 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
VDS , Drain-to-Source Voltage (V)
0.01 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
I D , Drain-to-Source Current (A)
TJ = 150 C
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
5.4A ID = 5.2A
2.0
1.5
1
TJ = 25 C
0.1 V DS = 15 50V 20s PULSE WIDTH 6.0 7.0 8.0 9.0
1.0
0.5
0.01 5.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHF57234SE, JANSR2N7499T2
2000
1600
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 5.2A 5.4A VDS = 200V VDS = 125V VDS = 50V
C, Capacitance (pF)
15
1200
Ciss Coss
10
800
400
Crss
5
0
1
10
100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 10 20 30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
10
10 100s
TJ = 150 C
1
1 Tc = 25C Tj = 150C Single Pulse 1.0 10 100
1ms
TJ = 25 C V GS = 0 V
0.8 1.2 1.6 2.0 2.4
10ms
0.1 0.4
0.1
VSD ,Source-to-Drain Voltage (V)
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHF57234SE, JANSR2N7499T2
Pre-Irradiation
6.0
VDS
5.0
RD
VGS RG
D.U.T.
+
ID , Drain Current (A)
4.0
-V DD
3.0
V GS
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
VDS 90%
1.0
0.0
25
50
TC , Case Temperature ( C)
75
100
125
150
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHF57234SE, JANSR2N7499T2
EAS , Single Pulse Avalanche Energy (mJ)
350 300 250 200 150 100 50 0
TOP BOTTOM
15V
ID 2.3A 3.3A 5.2A
VDS
L
DRIVER
RG
D.U.T.
IAS tp
+ - VDD
A
VGS 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V(BR)DSS tp
Starting TJ, Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHF57234SE, JANSR2N7499T2
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 10.5 mH Peak IL = 5.2A, VGS = 12V A ISD 5.2A, di/dt 307A/s, VDD 250V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-205AF (Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/2004
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